Analysis of Ion-Induced SEFI Phenonmena in 40nm monolithic resistance random access memory

This article mainly focuses on the single event function interruption (SEFI) of 40 nm monolithic resistance random access memory (RRAM). Three dynamic modes were used in the experiment, including two read-only modes and write-read-read mode. The SEFI cross-section of three dynamic modes are similar. SEFI observed in the experiment is further divided into several types according to the characteristics of the error. The basic mechanisms of the different types of SEFI are analyzed and explained accordingly.