Investigation on Dynamic Characteristic Variations Caused by TID for SiC MOSFET Power Devices

The dynamic characteristics of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices is examined after exposure to a total ionizing dose (TID). The dynamic characteristics studied in this paper refer to the capacitive characteristics. The results for ON bias are explored. The irradiated device shows gate-drain capacitive (C
GD
) characteristic curves shift positively and gate-source capacitive (C
GS
) characteristic curves shift negatively. The physical mechanisms for these variations are analyzed and confirmed by technology computer-aided design (TCAD) simulation.