Effect of LET and Voltage on Heavy-ion Induced Charge Collection in Bulk FinFET Device

This paper presents a simulation study on the single-event transient (SET) radiation response and influencing factors of FinFET device and compares the charge collection under different processes. Based on TCAD simulation, a physical model of a bulk FinFET device was established to investigate the effect of drain bias voltage on the charge collection mechanism for different Linear Energy Transfer (LET) values of incident heavy ions. The results indicate that at low LET, the tendency to increase charge collection and heavy-ion-induced current peak in the FinFET device is more pronounced due to the competition between the drift mechanism and the parasitic bipolar amplification effect on the drain-side charge collection. Additionally, the study compared the radiation-induced currents of FinFET, FDSOI and planar bulk CMOS device. The findings demonstrate that the charge collection of the FinFET device is smaller than that of planar bulk device but larger than FDSOI device, with the difference being more significant at high LET.