Evaluation of Single-Event Upset in FinFET Device

With the continuous development of the IC industry, planar MOSFET technology has reached its limits, especially at the 16nm and below process nodes. FinFET technology has become the mainstream technology. FinFET devices are characterized by high integration and high operating frequencies. With the growing demands of space applications, FinFET devices will undoubtedly be widely applied in the aerospace field. However, due to significant changes in device structures, a rigorous evaluation of FinFET devices is required before their application in the aerospace domain, to ensure their reliability and stability in space environments. In the space environment, SEU is one of the main factors affecting device reliability. Conducting radiation assessment on SEU of FinFET devices, studying the mechanism of SEU in FinFET devices, is significant for the radiation hardening of FinFET devices, and it will accelerate the development of FinFET devices in the aerospace application field.