Analysis of the Dual Gate Vertical TFET Performance with a Dual Gate Oxide Material Stacking

In terms of electrical output parameters, TFET surpasses traditional MOSFET. The device name for TFET is also dependent on their structure. This work designs a dual gate vertical TFET (DG-VTFET) with stacking of two gates oxide material. Utilizing the stacking of two different gate oxide materials, the output properties are examined. The simulation results show that, DG-vertical TFETs with dielectric HfO
2
-Si
3
N
4
shows improved outcomes in terms of ON-current
$(1.07\times 10^{-4} \mathrm{A}/\mu\mathrm{m})$
and current ratio (
$1.44\times 10^{12}$
). The simulated results show that the DG vertical TFET is a good option for low-power and switching applications.