Perovskite Hole Transport Layers in Tin Sulfide Thin Film Solar Cells: Computational Insights and Analysis

The numerical simulation study of tin sulfide (SnS)-based thin film solar cells(TFSC) having lead bromide (CH
3
NH
3
PbBr
3
) and tin bromide (CH
3
NH
3
SnBr
3
) perovskite layer as hole transport layer(HTL) was done in the current work. Different material properties like thickness, acceptor density (NA), electron mobility (
$\mu$
) of absorber layer and perovskite layer was changed, and the impact of those changes on the solar cell's output parameters has been carefully examined. It was found that the tin bromide perovskite HTL layer is showing better results in comparison with the lead bromide based thin film solar cells(TFSC). A conversion efficiency(
$\eta$
) of 13.10% with a short circuit current(J
sc
) of 22.82 mA/cm
²
, open circuit voltage(Voc) of 0.754 V and fill factor(FF) of 77.53% was achieved. To realize the device practically, deposited SnS using a spin coating technique which is easy, and economic one. The deposited sample was annealed at 400°C for 10 minutes. The compositional and electrical properties studied which shows that SnS is a suitable absorber layer to be used in solar cells.