Transient Analysis of Differential Amplifier Using Double-Gate MOSFET

This work presents an overview of the design and performance analysis of a Double-Gate (DG) MOSFET based differential amplifier. The distinct properties of DG MOSFETs, such as improved control over channel voltage and reduced Short-Channel Effects (SCE) have been analyzed for use in advanced differential amplifier design. The development of these differential amplifiers provides an opportunity to enhance the performance and versatility of various analog signal processing applications by taking advantage of DG MOSFETs' distinctive properties. This work highlights the parametric analysis of the system's performance involving DC and transient response.