Total Ionizing Dose Effects Sensitivity of Unsalicided Polysilicon Resistors

We present the total ionizing dose (TID) dependencies of output resistance of the 1.8- and 1.5-V stub series-terminated logic (SSTL18/15) transmitter drivers fabricated with commercial 65-nm technology. The analysis showed the radiation-induced resistance growth that was attributed to the interface-trap buildup in unsalicided polysilicon resistors. The growth accelerates at a low-dose rate (LDR). We also discuss the results for 24 h of annealing at room temperature (RTA) followed by high-temperature annealing (HTA) for 168 h, the layout dependencies, and the significance of the observed effects at higher absorbed doses.