Design of Filtering and Limiting Integrated Ferrite Device in High-Power Microwave Electromagnetic Environment

Based on the linear responses and nonlinear (NL) loss effects of ferrite, a filtering–limiting (FT) integrated device applicable to the high-power microwave (HPM) electromagnetic environment is proposed. The small-signal bandpass filtering characteristics of the FT device with polycrystalline yttrium iron garnet (YIG) as a substrate are achieved using the conventional parallel-coupled microstrip structure. When HPM pulses within the operating frequency band are injected, the NL loss effects are excited in this device, achieving power-limiting characteristics. However, the spatial distribution of the RF magnetic fields in such a device is extremely inhomogeneous. There is currently no commercially available simulation tool that can effectively calculate the power loss performance of ferrite materials in the HPM electromagnetic environment. Therefore, combined with the transient-state NL threshold theory, an equivalent iterative simulation method for structure partition is proposed. This method is utilized to quantitatively evaluate the power loss of such resonant structures. The simulated results align well with the measured trends and can successfully indicate the limiting threshold, limiting isolation, and dynamic range of the FT device under HPM conditions.