CMOS-Compatible Barometric Pressure Field-Effect Transistor-Type Sensor

In this work, we propose a metal-oxide-semiconductor field-effect transistor-based barometric pressure sensor having a ${p}$ -type buried channel, air gap, and air capacitor. The proposed sensor demonstrates a linear 8-fold response when decreasing atmospheric pressure from 740 Torr to 250 Torr, offering the advantages of compact size and low power consumption. The low-frequency noise characteristics and temperature dependency of the sensor are investigated to further demonstrate the sensor performance.