Zn2SnO4 Films for Use as Transparent Conductive Layers of Electronic Devices

In the work, Zn
2
SnO
4
films were obtained by sputtering nanoinks based on a suspension of nanoparticles. After application, the layers were annealed in an argon atmosphere. The results of diffractometric studies indicate the presence in the films of only the zinc orthostanate phase with the inverse spinel structure, confirmed by Raman spectroscopy. The investigated films can be used as a cheap analog of ITO for creating transparent conductive layers of electronic devices.