Package Design of Three-Level Power Modules Based on Highly Integrated RC-IGBTs

Three-level power module with higher power density is widely used in photovoltaic power generation, motor drive and other fields. In order to solve the problem that the three-level module requires many components and has a complex structure, A new power module combining 1200V/400A RC-IGBT (Reverse-conducting insulated gate bipolar transistor) chip and A-NPC (Active Neutral Point Clamped) three-level topology is designed. RC-IGBT can meet real-time current and temperature monitoring and feedback, with high functional integration. Q3D and ANSYS simulation platforms were used to verify the rationality of module chip layout, package heat dissipation performance and mechanical reliability.