Homoepitaxial growth of GaN/(In,Ga,Al)N MQWs on M-GaN (non-polar) and C-GaN (polar) substrates

MQWS based on quaternary III-nitride alloys are likely to be the active region of UV emitters as well as other optical devices like modulators. The majority of reported work so far is based on GaN/AlGaN MQWs, grown heteroepitaxially along the polar direction [0001] on a variety of substrates. There is also some recent work on growing such MQWs heteroepitaxially along the non-polar [10-10] direction on LiAlO/sub 2/ substrates.