Characterization of Current Collapse and Enhancement of Hydrogen-Terminated Diamond MOSFET Due to Long-Term Trapping Effects

In this article, the current collapse (CC) and current enhancement (CE) of the hydrogen-terminated diamond (H-diamond) MOSFET are found. The nonmonotonic variation of the drain current (DC) due to the long-term trapping effects is characterized by a proposed method, which involves the transient current measurements and the energy-level extractions. Based on the method, the measured transient current is utilized to infer that the abnormal phenomena are caused by the combined effect of the trapping near the gate and the absorption of atmospheric components on the surface of the device. With the extracted energy levels, the CC is deduced to be induced by the surface trap. The energy diagram for the surface trap in the H-diamond is given to make the trapping mechanism more clearly. By changing the test atmosphere, the CE is found to be caused by the component of the air. This work is useful for improving the performance of the H-diamond device.