Characterization and modeling of Ge film thermometers for low temperature measurements

Cryogenic resistance thermometers composed of Ge films on GaAs substrates have been produced and characterized They are able to measure temperature over a wide range, from 0.03 K to 400 K. Behavior of these thermometers in magnetic fields and under gamma irradiation has been studied. The low-temperature conduction and magnetoresistance mechanisms of Ge-films used as a sensitive material for thermometers have been analyzed.