Dependence of the Electrical Behavior of an Indium-Gallium-Zinc Oxide Thin-Film Transistor on the Process Condition of Plasma-Based Fluorination

Fluorination is known to have beneficial effects on the electrical behavior of a metal–oxide thin-film transistor (TFT). These include a positive shift of the turn-on voltage and a higher resistance against thermally, hydrogen-incorporation, or bias-stress-induced parameter drift. Hitherto there is a scarcity of reports on the dependence of the effectiveness of plasma-based fluorination on its process condition. It is presently shown that the effectiveness improves with a higher fluorination temperature but degrades upon exposure to a postfluorination oxidizing atmosphere.