Growth of electronic devices to circumvent the upcoming challenges from Artificial Intelligence

Large number of electronic devices based on semiconductors have been worked upon since the discovery of first Bipolar Junction Transistor (BJT) in 1947 by Shockley. Same have kept the story of Moore's law alive since last more than 5 decades. However, there has been a healthy debate among device scientists that whether this law will continue to guide them for years to come as well with the immense pressure coming in from software developers in terms of development of state-of-the-art technologies like ChatGPT. New devices like Tunnel Field Effect Transistor, FinFET, DGFET etc. have been very successfully able to create a lot of noise in research circles to prove their utility for upcoming generation of integrated circuits. A detailed comparison among all these devices along with few others like DS-H-DLTFET, FinFET about their fabrication feasibility, critical parameters of operation (Sub threshold swing (SS), threshold voltage (Vth), Ion/Ioff ratio etc.) has been a missing thing in the literature. This paper tries to fill that gap and provides a comprehensive summary in terms of comparison among these devices with the help of suitable tables, Figs and graphs. Work presented in this paper will be useful for any budding researchers who want to excel in the area of research in electronic devices.