Analyzing Total-Ionizing-Dose Induced Memory Window Degradation in Ferroelectric FinFET

The total-ionizing-dose (TID) effect of ferroelectric FinFET structure (Fe-FinFET) is analyzed under various gamma ray irradiation conditions. An TCAD model is developed to understand the physical mechanism of TID effect, and the simulation results are calibrated with the experimental data. We show that the TID-induced memory window degradation is attributed to two types of traps being generated within the ferroelectric layer and at the interfacial layer/silicon interface. Furthermore, the impact of the scaling down the Fe-FinFET structure is investigated with various gate lengths and fin widths. The projection shows that the scaled Fe-FinFET still could maintain a 0.4 V memory window under the highest radiation dose (10 Mrad). The sufficient memory window under the highest irradiation condition confirms the survivability of the Fe-FinFETs and makes Fe-FinFET a promising candidate for data storage as radiation-hard non-volatile memory in harsh ionizing environment.