Fabrication and Evaluation of Resistive Switching Devices Utilizing Selective Surface Oxide Films of Liquid Metal Alloys

In this study, two ReRAMs (Resistive RAM) were fabricated using liquid metal alloys and their selective surface oxide films. The ReRAM 1 was fabricated without SAM (Self-Assembled Monolayer), and the ReRAM 2 was fabricated with SAM. The electrical characteristic of the ReRAM 1 showed a bipolar type resistive switching. In the ReRAM 2, resistive switching was confirmed in the 1st cycle and the 2nd cycle. However, the resistance increases gradually, and the resistive switching was not confirmed in the 3rd cycle. The electrical conduction mechanism analysis for the ReRAM 1 showed ohmic conduction at low resistance state and SE (Schottky Emission) at high resistance state.