Heat Treatment Dependence and Electrical Characterization of Resistive Switching Devices Using Liquid Metal

This paper aimed to investigate the effect of the heat treatment on the ReRAM (Resistive switching RAM) using liquid metal properties during the fabrication processes. We observed the appearance of Al and Pt on the substrate and the electrical conductive characteristics. At 560°C, no change were observed on the substrate, and the resistive switchings were not observed due to insufficient Al oxidation of Al layer. Under the 610°C condition, however, the Al layer was oxidized, which was confirmed by the change in color of some area of the layer to blue. In this state, resistive switching was confirmed and, consistently, low current values were obtained.