Wafer Level Integration of Sub-THz and THz Systems

The letter presents a wafer level integration technology for sub-THz and THz systems. The developed integration process relies on deep reactive ion etching (DRIE) micromachining and Au-Au wafer bonding technology of silicon wafer substrates. The method allows integration of individual standard monolithic microwave integrated circuits (MMICs) of different technologies into the same Si package. The process includes only standard fabrication steps than can be automated. The integration process is scalable and cost efficient for future sub-THz and THz communication and sensing applications.