High voltage and high power IGBT performance optimization design

Due to the complexity of the application requirements, the high-power IGBTs used in the power grid must possess not only a high breakdown voltage and a low saturation voltage, but also strong short-circuit robustness in the event of system failure, which poses a significant challenge in the industry design. In this paper, various IGBT buffer-layer concentration distribution profiles formed by different process combinations are studied. The key factor to optimized the relationship between IGBT static performance and short-circuit robustness is also explicated. By adjusting the combination of the buffer layers with different concentration distributions and P⁺ collectors with different concentrations, the design scheme of 4500V IGBT with superior performance and good short-circuit robustness is obtained.