New 600V GaN Single-Stage Isolated Bidirectional 400V Input Three-Phase PFC Rectifier

This paper introduces a novel single-stage isolated bidirectional partly modular three-phase power-factor-correction (PFC) rectifier topology that requires half the blocking voltage rating of the primary-side transistors compared to conventional monolithic three-phase circuit arrangements. Specifically, interfacing a 400V three-phase grid to a 400V dc output is possible using modern high-performance 600V GaN transistors in standard half-bridge configurations instead of 1200V SiC devices or multilevel bridge-leg structures. The topology is also applicable for solid-state transformers connected to the medium-voltage grid, e.g., a 4.16kV grid can be interfaced using 6.5kV IGBTs. Further, emerging 600V monolithic bidirectional GaN transistors (or, similarly, future bidirectional HV SiC devices) enable further variants of the proposed topology with only half the primary-side power transistor count.