Static Characterization of Discrete MOSFETs after Rotational Stress Testing

This paper will discuss the rising need for rotating power electronics in aviation application of electric drives, present the design of a test fixture to perform rotational stress testing of discrete MOSFETs up to speeds of 12000 rpm, and experimental results for MOSFETs post-stress tests. Static characterization of the MOSFETs using a curve tracer was conducted before and after rotational stress to determine any shifts in electrical performance. The results showed negligible shifts of performance metrics for the MOSFET after 3000 rpm rotation and a small shift in threshold voltage.