Measuring the Doping Concentration of Si and CdTe Absorbers Using Lock-in Amplified Quantitative QSSPL

There are few doping concentration measurement techniques which are contactless and usable for all substitutionally doped semiconductors. In this work, we demonstrate the use of lock-in amplified quantitative quasi-steady state photoluminescence (QSSPL) to simultaneously measure the external radiative efficiency (ERE), lifetime, and activated dopant concentration of semiconductors. We first demonstrate that our doping concentration measurement agrees with the known doping concentration of a Si sample. Then, we demonstrate the use of our technique to measure the doping concentration of CdTe, which is much more difficult to accurately assess with other techniques.