Fabrication of Uniform Aluminium Nitrate Thin Film on 2-inch Silicon Substrate

Aluminium nitrate (AlN) has attracted numerous interests among researchers due to its unique properties in the semiconductor material and other high-performance devices. Investigating the uniformity of AlN thin film is one of the most challenge tasks. In this study, AlN thin films successfully deposited on a 2-inch of silicon substrate by using the magnetron sputtering technique. The uniformity analysis has been done by various characterization method such as XRD, AFM, surface profiler and FESEM. After depositing AlN thin film into 2-inch Si wafer, the thickness measure at 4 spot shows inconsistency and not reach expected uniformity, however the value at center d is the nearest to reach uniformity due to lowest value for average surface roughness, highest thickness value and acceptable value of crystallinity.