A 110-160 GHz ASK Receiver with Isomorphic Low Noise Power Amplifier and Multi-Mode Interface in 28-nm CMOS

In recent years, there has been a growing interest on the terahertz (THz) frequency to enhance communication rate, particularly in 100–200 GHz band. Within this research domain, silicon-based circuits have garnered significant attention due to their low cost and high integration. Additionally, Simple modulation scheme, such as amplitude shift keying (ASK), have also gain considerable traction owing to their compact architectures and minimal requirements on ADC and DAC. Several silicon-based D-band terahertz transceiver front-ends [1]–[3] and wideband amplifier [4]–[7] have been reported, showing remarkable achievements in terms of RF bandwidths exceeding 30 GHz and data rates over 38 Gbaud.