A New Revolution in Logic Silicon IC Technology: GAA FETs are Replacing FinFETs

The paper examines the main path of development of CMOS technology for silicon microprocessors and logic ICs for the global semiconductor industry in the twenties of the 21st century. It is substantiated that FinFET technologies have now practically lost the possibility of further scaling in accordance with Moore's law. They are replaced by transistors manufactured according to the stacked design nanosheet stacked nanosheet GAAFET. The historical development of transistor design and its limitations are considered. Technological issues of creating such three-dimensional structures are discussed. It is noted that this shift in design signifies a second technological revolution in 21-stcentury microelectronics, demanding substantial efforts from leading chip manufacturers. The importance of a new innovation in transistor architecture is noted, which is associated with power buses – BS PDN. Notably, the "Big Three": TSMC, Samsung, and Intel, all express strong confidence in this transformative technology, incorporating it into their imminent roadmaps alongside the innovative BS PDN approach.