Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall

In this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch free-standing GaN (FS-GaN) substrate were demonstrated. The slanted sidewall on edge of devices was conducted to suppress the peak of electric field distributions at high voltage. By realizing an off-state breakdown voltage
$V_{BR}$
of 2 kV and an on-state resistance
$R_{on}$
of 1.34
$\text{m}\Omega \bullet $
cm2, the devices fabricated in this work achieved the highest power device figure-of-merit
$V_{BR}^{2}/R_{on}$
of 3.0 GW/cm2 in the reported vertical GaN JBS diodes which showed great potential in high voltage applications.