Monte Carlo simulation of consecutive implants into SiO/sub 2/ capped Si

The low energy as-implanted profile is very sensitive to the cap oxide layer thickness and PAI conditions. In this work, theoretical and experimental studies have been carried out quantitatively to investigate these dependencies. Using ZBL pair-specific inter-atomic potentials in the Monte Carlo ion implantation simulator, UT-MARLOWE, consecutive implants of PAI and PLDD were simulated and above effects were accurately captured.