Modeling of ultra shallow junctions and hybrid source/drain profiles annealed by soak and spike RTA

We discuss the 1D/2D modeling of arsenic profiles under soak and spike anneal conditions at both shallow extension and high concentration source/drain areas. This work also addresses the calibration of the phosphorus profile in a hybrid (arsenic + phosphorus) source/drain with various anneal temperatures. It is shown that the "+1" or modified "+n" model is not necessary for shallow arsenic profile modeling under spike anneal conditions. Finally, it is also shown that modeling of the hybrid source/drain profile can be achieved by optimization of the dopant's Fermi level dependent diffusivity, initial value of point defects concentration at equilibrium state, and neglect of implant induced damage.