Drift-diffusion-based modeling of the non-quasistatic small-signal response for RF-MOSFET applications

A non-quasistatic MOSFET model for the small-signal response is developed by including the continuity equation in an analytical way. This model developed based on the drift-diffusion approximation enables us to predict the high-frequency response for any bias conditions. Our result shows that the quasistatic approximation calculates the response approximately correct up to f/sub T//2, which is much higher than the f/sub T//10 previously estimated.