On the large-signal CMOS modeling and parameter extraction for RF applications

A small-signal equivalent circuit of an RF MOSFET not only fully compatible with 4 terminal large-signal quasi-static I-V and Q-V models but suitable for 3 terminal two-port s-parameter measurement, is proposed along with very simple and accurate parameter extraction method. This model includes the intrinsic and extrinsic elements important for AC simulation at RF. The validity and accuracy of our approach is verified from 0.18 /spl mu/m RF NMOS results.