Analysis of Space Magnetic Field Coupling Effect on Transient Process of Power MOSFET

Power MOSFETs are commonly used switching devices in power electronic systems, and their gate drive performance has an important impact on system performance and reliability. However, due to parasitic parameters in PCB routing and power device packaging, the drive signal may oscillate. In addition, during the transient process, the rapid change of load current and the large reverse recovery current generated by the MOSFET can affect the effectiveness of the drive through the spatial magnetic field. In this article, the coupling effect of power circuit to drive circuit is analyzed by double pulse experiment and space magnetic field simulation.