gEOL: A Gradient-Based End-of-Life Criterion for Power Semiconductor Modules

This letter proposes a gradient-based end-of-life (EOL) criterion for power semiconductor modules under power cycling tests. It significantly improves the consistency in determining the cycle-to-failure of testing samples compared with the widely used absolute-value-based EOL criterion, such as the percentage change of
on
-state saturation voltage of insulated-gate bipolar transistors (IGBTs). Both analytical analyses and experimental results are presented to explain and verify the feasibility and superior consistency of the proposed one.