Novel first-order quasi-phase matched semiconductor waveguide crystal for frequency conversion

Summary from only given. We report here a first-order quasi-phase matched semiconductor device based on a novel methodology that involves a periodically-switched-nonlinearity (PSN). Our first-order QPM devices utilise a periodically-switched-nonlinearity in a novel design of GaAs/AlGaAs structure, which is based on a re-growth procedure. Our calculations show that SHG conversion efficiencies from such devices at wavelengths beyond 4 /spl mu/m.