Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors

The thermal dependence of the resistance in the low resistance state of TiN/Ti/HfO
2
/Pt memristors has been experimentally studied. After modeling the measured I-V curves, the different resistive components (ohmic and non-linear) have been extracted and their thermal behavior estimated. Finally, the intrinsic series resistance linked to the metallic paths, contacts, and the remnants of the filament during resistive switching is also obtained at different temperatures. The results can be employed to propose physically-based models for circuit simulation.