SuperGaN: Synthesis of NbTiN/GaN/NbTiN Tunnel Junctions

Nb-based circuits have broad applications in quantum-limited photon detectors, low-noise parametric amplifiers, superconducting digital logic circuits, and low-loss circuits for quantum computing. The current state-of-the-art approach for superconductor-insulator-superconductor (SIS) junction material is the Gurvitch trilayer process based on magnetron sputtering of Nb electrodes with Al-Oxide or AlN tunnel barriers grown on an Al overlayer (Gurvitch et al., 1983). However, a current limitation of elemental Nb-based circuits is the low-loss operation of THz circuits operating above the 670 GHz gap frequency of Nb and operation at higher temperatures for projects with a strict power budget, such as space-based applications. NbTiN is an alternative higher energy gap material and we have previously reported on the first NbTiN/AlN/NbTiN SIS junctions with an epitaxially grown AlN tunnel barrier (Cyberey et al., 2019). One drawback of a directly grown tunnel barrier compared to thermal oxidation is control of the barrier thickness and the uniformity of thickness across a substrate, leading to variations in current density (J
$_{c}$
). Semiconductor barriers with smaller barrier heights enable thicker tunnel barriers for a given J
$_{c}$
(Kroger et al., 1981). GaN is an alternative semiconductor material with a closed-packed Wurtzite crystal structure similar to AlN and it can be epitaxially grown as a tunnel barrier using the Reactive Bias Target Ion Beam Deposition (RBTIBD) technique. This work presents the preliminary results of the first reported high-quality NbTiN/GaN/NbTiN heterojunctions with underdamped SIS I(V) characteristics.