Dual Source Vertical TFET Channel Overlapped Structure with Enhanced RF/Analog Performance for Low-Power- Applications

This paper emphasizes evaluating the structure and performance of a Dual Source Vertical Tunnel Field-Effect Transistor (DS-VTFET) at the device level. This involves the analysis of two different DS-VTFET structures: one with a channel overlapped and the other without a channel overlapped. The concept of an overlapped channel in DS-VTFET is introduced, showcasing how it enhances both DC performance and RF (radio frequency) device standards by improving gate modulation. The analysis conducted in this research involves studying the inherent capacitances of the device and evaluating figures of merit, such as transconductance (gm). The overlapped DS-VTFET demonstrates superior performance, including a high drive on current (I
ON
) = 1.20 × 10
^-4
A, reduced off-state current (I
OFF
) = 3.95 × 10
^-14
A, and a sub-threshold slope (SS) of 11mV/decade, and average subthreshold swing (AVSS)= 35.30 mV/decade, compared to the structure without channel overlapped structure which has I
ON =
9.89 × 10
^-5
A, I
OFF
=2.96×10
^-13
A, SS=12.77 mV/decade and AVSS=39.42 mV/decade. The DS-VTFET design aligns with the International Technology Roadmap for Semiconductors (ITRS), which aims to achieve high-performance and low-power applications in the semiconductor industry.