Al-Nanoparticle Sensitized β-Ga2O3-Based Solar-Blind Photodetector Fabricated via Focused Ion Beam Micro/Nano Processing

The performance of
$\beta $
-Ga2O3-based solar blind photodetector (PD) has been enhanced apparently by utilizing the effects of localized surface plasmon resonance of Al nanoparticles (Al NPs) array. The size and period of the Al NPs array are determined using the finite-difference time-domain method to obtain optimal resonance absorption with
$\beta $
-Ga2O3 in the solar-blind waveband. Al NPs were then fabricated using focused ion beam micro/nano processing on a
$\beta $
-Ga2O3-based metal-semiconductor-metal structure PD. The dark current of the
$\beta $
-Ga2O3 structure with Al NPs (
$\beta $
-Ga2O3@Al) is
$7.72\times 10^{-{12}}\text{A}$
, which is two orders of magnitude lower than that of pure
$\beta $
-Ga2O3 (
$8.01\times 10^{-{10}}\text{A}$
). This difference is attributed to the partial oxidation of the Al NPs, which forms Al2O3 and passivates the
$\beta $
-Ga2O3 interface. In addition, due to the resonance absorption and the hot electrons generated by the interband transition of the Al NPs, the light current increases threefold, resulting in the
$\beta $
-Ga2O3@Al NP PD having a high light-to-dark current ratio of
$5.57\times 10^{{4}}$
. Under a bias of 20 V and 254-nm illumination (
$44.38\mu \text{W}$
/cm2), the
$\beta $
-Ga2O3@Al NP PD has high responsivity and detectivity of 131 A/W and
$7.17\times 10^{{14}}$
Jones, respectively. Furthermore, owing to the oxide shell Al2O3 passivation and the surface plasmons of the Al NPs, the persistent photoconductivity exhibited by the pure
$\beta $
-Ga2O3 at rise time is suppressed and the decay time is sped up.