Ultrathin Body and Buried Oxide SOI MOSFETs With Non-LDD Source/Drain Extensions: A Simulation Study

An ultrathin body and buried oxide (UTBB) SOI MOSFETs with novel non-LDD source/drain extensions are proposed, where highly conductive paths are induced by positive charges locally distributed in the buried oxide (BOX) connecting the channel and respective source and drain. TCAD simulation shows that the performance of the proposed MOSFET is superior to conventional UTBB MOSFETs of the same footprint in terms of drain-induced barrier lowering (DIBL), subthreshold swing (SS), and off-state current. Even with much relaxed device dimensions, such as thicker silicon body and/or BOX either with or without introducing a ground plane (GP), it can still achieve higher driving current and similar short-channel effect (SCE) immunity as the conventional UTBB MOSFETs. Such advantages of the proposed MOSFETs are due to better gate electrostatics over the channel benefited from the novel source/drain extensions.