Hourglass and Semi-Hourglass layout techniques to improve radiation hardening of NMOS devices

Radiation hardening devices play a critical role in ensuring the reliability and longevity of electronic systems deployed in harsh radiation environments. Over the years, significant advances have been made to enhance the radiation tolerance of electronic components, resulting in improved performance and increased resilience against radiation-induced failures. This paper presents two new layout styles for mosfets the hourglass transistor and the semi-hourglass transistor. The new designs improve the device's behavior under total ionizing radiation (TID). The electrical response of the new devices was characterized by simulations using 3D physical models. The new devices showed 52% and 48% performance in the off-current state after radiation effects.