Response of 5-nm Bulk FinFET SRAMs to Extreme Ionizing and Non-Ionizing Doses

Single-particle-induced displacement damage (micro-DD) is evaluated as a possible mechanism for permanent loss of circuit functionality at highly scaled technology nodes. Heavy-ion and 10-keV X-ray irradiation experiments were performed to characterize the circuit-level response of 5-nm bulk FinFET static random access memories (SRAMs) to ionizing and non-ionizing radiation. High fluence heavy-ion irradiations were performed to cause stuck bits in the SRAM array and to search for micro-DD effects. The observed stuck bits and changes to integrated circuit (IC)-level currents were consistent with cumulative displacement-damage effects and inconsistent with micro-DD. The 5-nm bulk FinFET SRAMs were extremely robust against high fluences and doses of both ionizing and non-ionizing radiation.