Dynamic On-Resistance and Threshold Voltage Instability Evaluation Circuit for Power GaN HEMTs Devices

The p-GaN gate-based gallium nitride (GaN) power devices are a promising technology for power electronics applications. However, these devices suffer from dynamic on-resistance (R
_{ds, on}
) and gate threshold voltage (V
_th
) shifts during operation. The dynamic R
_{ds, on}
is typically evaluated in a switching circuit, whereas the V
_th
shift is measured using a curve tracer. Both parameter evaluations require distinct setups and do not represent the same operating conditions. To overcome these drawbacks, this letter proposes a circuit capable of measuring both parameters in a hard-switching operation under the same operating conditions. Using this circuit, an EPC2014 C device is characterized, and both parameters are reported.