Unveiling Thermal Effects on Sn-Doped β-Ga2O3 Schottky Barrier Diodes on Sapphire for High-Temperature Power Electronics

The study investigates the performance of Schottky barrier diodes (SBDs) fabricated on high-quality Sn-doped
$\beta $
-gallium oxide (Ga2O3) film on sapphire (0006) substrate. Temperature-dependent performances are probed, in terms of forward and reverse bias characteristics. When temperature increases from 25 °C to 200 °C, the barrier height increases, and the ideality factor advances to unity. The current conduction happens differently at low and high temperatures because of the inhomogeneity in Schottky barrier height. Different methods are used to analyze temperature variations in the barrier heights. A high breakdown voltage of >200 V at 25 °C and a decent
${J}_{ \mathrm{\scriptscriptstyle ON}}/{J}_{ \mathrm{\scriptscriptstyle OFF}}$
ratio for the all-temperature range are measured. The leakage current of the device does not significantly change with the temperature. These characteristics make the investigated Schottky diode structures on sapphire promising for future high-power electronics applications at elevated temperatures. Thus, cost-effective integration of Ga2O3 with non-native substrates is emphasized to enable rapid commercialization success.