Modeling the Thermal Characteristics of Stacked 2T0C Memory Array Based on InGaZnO4 Thin-film Transistors

For the first time, the electrothermal characteristics of the stacked 2T0C memory array were modeled based on the material properties, electron transport mechanism of InGaZnO
4
(IGZO) and basic Fourier heat flow equation utilizing the technology computer-aided design (TCAD) tool. According to the proposed electrothermal model, the multi-layer stacked 2T0C memory array would bring severe self-heating issue from the thermal crosstalk among layers. The temperature rising of stacked 2T0C cells decrease the retention time severely due to the temperature instability of IGZO thin-film transistors TFTs. Furthermore, several advanced device-level strategies were proposed to ameliorate the heat accumulation problem.