Investigation of Pinning and Current-Carrying Capacity in 2G HTS Wires With Artificial Pinning Centers Obtained at Various Deposition Rates

The production of second-generation high-temperature superconductors (2G HTS) greatly simplifies the construction of electrical devices based on them. In turn, the performance of 2G HTS is highly dependent on the manufacturing process, architecture, and materials on which they are produced. Particularly important in the process of industrial 2G HTS development is the addition of doping additives to reduce the anisotropy of the current-carrying capacity. In this work, the current-carrying capacity I
_c
(T, B, θ) of industrial 2G HTS samples with different deposition rate and concentration of BaSnO
₃
- 6 mol.% doping additives were measured in fields up to 9 T and at temperatures 65 and 77 K. Experimental measurements were carried out at various orientations of an external magnetic field of up to 1 T relative to the sample plane. It was found that the change of sputtering velocity leads to the decrease of current-carrying capacity at 77 K. The influence of the microstructural characteristics of the artificial pinning centers on the electrophysical parameters was considered.