Consecutive Irradiation and Thermal Annealing of Commercial P-Channel Power VDMOSFETs

This paper presents research on the effects caused with consecutive irradiation and thermal annealing of two commercial models of p-channel power VDMOSFETs IRF9520 and IRF9530. Threshold voltage shift, which is marked as the most important parameter for both dosimetry application, as well as reliability assesment is obtained and discussed. Experiment setup, as well as the measuring procedures are explained in more detail. Irradiation degradation causes threshold voltage shift, while the thermal annealing causes recovery. The average sensitivity of models for consecutive irradiation sessions is 9.54 ± 0.04 mV Gy
⁻¹
, where averagely 91.88 % is recovered through thermal annealing. Results point out that p-channel power VDMOSFET devices could be used in some dosimetry applications.