SiGe/Si Superlattice Ferroelectric HfZrO2 ΩFET and CMOS Inverter With SSmin,n = 62.4 mV/dec, ION/IOFF > 1.0 × 107, and Voltage Gain = 111.4 V/V

This study introduces a SiGe/Si superlattice (SL) ferroelectric omega field-effect transistor (Fe-
$\Omega $
FET). The ferroelectric characteristics of the developed TiN/ Fe-hafnium–zirconium oxide (HZO)/SL metal–insulator– semiconductor (MIS) capacitor were confirmed through grazing incidence x-ray diffraction (GIXRD) analysis at different temperatures. Fe-HZO usage improved the device performance, achieving subthreshold slopes (SS) of SS
$_{\text {min,n}}$
= 62.4 mV/dec and SS
$_{\text {min,p}}$
= 71.1 mV/dec, drain-induced barrier lowering (DIBL) values of DIBLn = 26.4 mV/V and DIBLp = 37.6 mV/V, and a high ON–OFF current ratio exceeding
$1.0\times 10^{{7}}$
. Compared to the device with HfO2 as a gate insulator with channel width (
$\text{W}_{\text {CH}}{)}$
= 30 nm and gate length (
$\text{L}_{\text {G}}{)}$
= 60 nm, the performance of the developed device was greatly improved. The voltage transfer characteristic (VTC) and voltage gain of SiGe/Si SL Fe-
$\Omega $
FET complementary metal–oxide–semiconductor (CMOS) inverter were also demonstrated, with a maximum gain of 111.4 V/V. In addition, the simulation of a state-of-the-art SiGe/Si SL Fe-
$\Omega $
FET was investigated. These results indicate that SiGe/Si SL Fe-
$\Omega $
FETs exhibit remarkable subthreshold properties and mitigate the short-channel effect.