GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF Applications

An explicit HEMT channel-charge compact model is developed that describes both energy-conserving and transit charge components in GaN and GaAs HEMTs. Uniquely and significantly, a charge formation-energy function is developed that defines the conserved component. A non-conserved component is identified, which is a transit charge that produces a mutual capacitance.